Vishay TrenchFET P-Channel MOSFET, 27 A, 20 V, 8-Pin PowerPAK 1212-8 SISS23DN-T1-GE3

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£8.46

(exc. VAT)

£10.16

(inc. VAT)

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20 +£0.423£8.46

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Packaging Options:
RS Stock No.:
814-1314
Mfr. Part No.:
SISS23DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

20 V

Package Type

PowerPAK 1212-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

11.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Length

3.3mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

195 nC @ 10 V

Number of Elements per Chip

1

Transistor Material

Si

Width

3.3mm

Height

0.78mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor



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