Vishay TrenchFET Dual N-Channel MOSFET, 18.7 A, 100 V, 8-Pin SO-8 Si4090BDY-T1-GE3
- RS Stock No.:
 - 228-2821
 - Mfr. Part No.:
 - Si4090BDY-T1-GE3
 - Brand:
 - Vishay
 
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
 - 228-2821
 - Mfr. Part No.:
 - Si4090BDY-T1-GE3
 - Brand:
 - Vishay
 
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18.7 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.01 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type N  | ||
Maximum Continuous Drain Current 18.7 A  | ||
Maximum Drain Source Voltage 100 V  | ||
Package Type SO-8  | ||
Series TrenchFET  | ||
Mounting Type Surface Mount  | ||
Pin Count 8  | ||
Maximum Drain Source Resistance 0.01 Ω  | ||
Channel Mode Enhancement  | ||
Maximum Gate Threshold Voltage 4V  | ||
Number of Elements per Chip 2  | ||
Transistor Material Si  | ||
The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.
100 % Rg and UIS tested
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