Vishay N-Channel MOSFET, 2.9 A, 800 V, 3-Pin DPAK SIHD2N80AE-GE3

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Subtotal (1 pack of 10 units)*

£6.94

(exc. VAT)

£8.33

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90£0.694£6.94
100 - 240£0.626£6.26
250 - 490£0.59£5.90
500 - 990£0.452£4.52
1000 +£0.421£4.21

*price indicative

Packaging Options:
RS Stock No.:
188-4982
Mfr. Part No.:
SIHD2N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

800 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

62.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

7 nC @ 10 V

Length

6.73mm

Minimum Operating Temperature

-55 °C

Height

2.25mm

Forward Diode Voltage

1.2V

E Series Power MOSFET.

Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)

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