Vishay N-Channel MOSFET, 20 A, 30 V, 8-Pin PowerPAK 1212-8SH SiSHA14DN-T1-GE3

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Subtotal (1 pack of 25 units)*

£12.15

(exc. VAT)

£14.575

(inc. VAT)

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Last RS stock
  • Final 5,825 unit(s), ready to ship
Units
Per unit
Per Pack*
25 - 225£0.486£12.15
250 - 600£0.462£11.55
625 - 1225£0.413£10.33
1250 - 2475£0.296£7.40
2500 +£0.233£5.83

*price indicative

Packaging Options:
RS Stock No.:
188-4957
Mfr. Part No.:
SiSHA14DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8SH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

26.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Maximum Operating Temperature

+150 °C

Length

3.3mm

Typical Gate Charge @ Vgs

19.4 nC @ 10 V

Width

3.3mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

0.93mm

Forward Diode Voltage

1.1V

N-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

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