Vishay TrenchFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiSH892BDN-T1-GE3
- RS Stock No.:
- 228-2931
- Mfr. Part No.:
- SiSH892BDN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
£6.23
(exc. VAT)
£7.48
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 5,970 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.623 | £6.23 |
| 100 - 240 | £0.591 | £5.91 |
| 250 - 490 | £0.467 | £4.67 |
| 500 - 990 | £0.436 | £4.36 |
| 1000 + | £0.33 | £3.30 |
*price indicative
- RS Stock No.:
- 228-2931
- Mfr. Part No.:
- SiSH892BDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 30.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 29W | |
| Typical Gate Charge Qg @ Vgs | 17.4nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 30.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 29W | ||
Typical Gate Charge Qg @ Vgs 17.4nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 100 V (D-S) MOSFET PowerPAK.
100 % Rg and UIS tested
Related links
- Vishay TrenchFET N-Channel MOSFET 100 V, 8-Pin PowerPAK 1212-8SH SiSH892BDN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8SH SiSH536DN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8SH SiSS54DN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 40 V, 8-Pin PowerPAK 1212-8PT SI7116BDN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SISA10DN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 70 V, 8-Pin PowerPAK 1212-8 SiS178LDN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 70 V, 8-Pin PowerPAK 1212-8 SiS176LDN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SISA04DN-T1-GE3