Vishay TrenchFET N-Channel MOSFET, 65 A, 40 V, 8-Pin PowerPAK 1212-8PT SI7116BDN-T1-GE3
- RS Stock No.:
- 228-2825
- Mfr. Part No.:
- SI7116BDN-T1-GE3
- Brand:
- Vishay
Save 39% when you buy 1000 units
Subtotal (1 pack of 10 units)*
£7.65
(exc. VAT)
£9.18
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,000 unit(s) ready to ship
- Plus 999,993,990 unit(s) shipping from 19 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
10 - 90 | £0.765 | £7.65 |
100 - 240 | £0.728 | £7.28 |
250 - 490 | £0.576 | £5.76 |
500 - 990 | £0.536 | £5.36 |
1000 + | £0.459 | £4.59 |
*price indicative
- RS Stock No.:
- 228-2825
- Mfr. Part No.:
- SI7116BDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 65 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | PowerPAK 1212-8PT | |
Series | TrenchFET | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.0074 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 65 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PowerPAK 1212-8PT | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0074 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.
Very low Qg and Qoss reduce power loss and
improve efficiency
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces
switching related power loss
improve efficiency
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces
switching related power loss
Related links
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