Vishay TrenchFET N-Channel MOSFET, 65 A, 40 V, 8-Pin PowerPAK 1212-8PT SI7116BDN-T1-GE3
- RS Stock No.:
 - 228-2825
 - Mfr. Part No.:
 - SI7116BDN-T1-GE3
 - Brand:
 - Vishay
 
Bulk discount available
Subtotal (1 pack of 10 units)*
£7.65
(exc. VAT)
£9.18
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,000 unit(s) ready to ship
 - Plus 999,993,990 unit(s) shipping from 24 March 2026
 
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units  | Per unit  | Per Pack*  | 
|---|---|---|
| 10 - 90 | £0.765 | £7.65 | 
| 100 - 240 | £0.728 | £7.28 | 
| 250 - 490 | £0.576 | £5.76 | 
| 500 - 990 | £0.536 | £5.36 | 
| 1000 + | £0.459 | £4.59 | 
*price indicative
- RS Stock No.:
 - 228-2825
 - Mfr. Part No.:
 - SI7116BDN-T1-GE3
 - Brand:
 - Vishay
 
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 65 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PowerPAK 1212-8PT | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0074 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type N  | ||
Maximum Continuous Drain Current 65 A  | ||
Maximum Drain Source Voltage 40 V  | ||
Package Type PowerPAK 1212-8PT  | ||
Series TrenchFET  | ||
Mounting Type Surface Mount  | ||
Pin Count 8  | ||
Maximum Drain Source Resistance 0.0074 Ω  | ||
Channel Mode Enhancement  | ||
Maximum Gate Threshold Voltage 2.5V  | ||
Transistor Material Si  | ||
Number of Elements per Chip 1  | ||
The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.
Very low Qg and Qoss reduce power loss and
improve efficiency
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces
switching related power loss
improve efficiency
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces
switching related power loss
Related links
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