Infineon 650V 4A, Diode, PG-TO263-2 IDK04G65C5XTMA2
- RS Stock No.:
- 258-0958
- Mfr. Part No.:
- IDK04G65C5XTMA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£2.46
(exc. VAT)
£2.96
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 998 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.23 | £2.46 |
| 20 - 48 | £1.06 | £2.12 |
| 50 - 98 | £1.00 | £2.00 |
| 100 - 198 | £0.92 | £1.84 |
| 200 + | £0.86 | £1.72 |
*price indicative
- RS Stock No.:
- 258-0958
- Mfr. Part No.:
- IDK04G65C5XTMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mounting Type | Surface Mount | |
| Package Type | PG-TO263-2 | |
| Maximum Continuous Forward Current | 4A | |
| Peak Reverse Repetitive Voltage | 650V | |
| Series | IDK04G65C5 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Mounting Type Surface Mount | ||
Package Type PG-TO263-2 | ||
Maximum Continuous Forward Current 4A | ||
Peak Reverse Repetitive Voltage 650V | ||
Series IDK04G65C5 | ||
The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Related links
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