Infineon 650 V 6 A Rectifier & Schottky Diode 3-Pin D2PAK
- RS Stock No.:
- 258-0961
- Mfr. Part No.:
- IDK06G65C5XTMA2
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£848.00
(exc. VAT)
£1,018.00
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 29 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £0.848 | £848.00 |
*price indicative
- RS Stock No.:
- 258-0961
- Mfr. Part No.:
- IDK06G65C5XTMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 6A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDK06G65C5 | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 54A | |
| Maximum Forward Voltage Vf | 1.8V | |
| Peak Reverse Current Ir | 750μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 6A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDK06G65C5 | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 54A | ||
Maximum Forward Voltage Vf 1.8V | ||
Peak Reverse Current Ir 750μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
The Infineon CoolSiC Schottky diodes generation 5 600V, 2 A in a DPAK real2pin package represents our leading edge technology for SiC Schottky barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit.
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behaviour
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
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