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Infineon 1200 V 40 A Diode Schottky 2-Pin TO-247 IDWD40G120C5XKSA1

RS Stock No.:: 222-4846
Mfr. Part No.:: IDWD40G120C5XKSA1
Brand:: Infineon

Infineon 1200 V 40 A Diode Schottky 2-Pin TO-247 IDWD40G120C5XKSA1

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Subtotal (1 unit)*

£9.89

(exc. VAT)

£11.87

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 237 unit(s) shipping from 26 January 2026

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Units	Per unit
1 - 4	£9.89
5 - 9	£9.41
10 - 24	£9.00
25 - 49	£8.59
50 +	£8.01

*price indicative

RS Stock No.:: 222-4846
Mfr. Part No.:: IDWD40G120C5XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	Diode
	Mount Type	Surface
	Package Type	TO-247
	Maximum Continuous Forward Current If	40A
	Peak Reverse Repetitive Voltage Vrrm	1200V
	Series	IDWD40G120C5
	Diode Configuration	Single
	Rectifier Type	Schottky
	Pin Count	2
	Maximum Forward Voltage Vf	1.7V
	Minimum Operating Temperature	-55°C
	Peak Non-Repetitive Forward Surge Current Ifsm	290A
	Maximum Operating Temperature	175°C
	Width	15.8 mm
	Length	40.21mm
	Standards/Approvals	JEDEC47/20/22
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type Diode
	Mount Type Surface
	Package Type TO-247
	Maximum Continuous Forward Current If 40A
	Peak Reverse Repetitive Voltage Vrrm 1200V
	Series IDWD40G120C5
	Diode Configuration Single
	Rectifier Type Schottky
	Pin Count 2
	Maximum Forward Voltage Vf 1.7V
	Minimum Operating Temperature -55°C
	Peak Non-Repetitive Forward Surge Current Ifsm 290A
	Maximum Operating Temperature 175°C
	Width 15.8 mm
	Length 40.21mm
	Standards/Approvals JEDEC47/20/22
	Automotive Standard No

Datasheet - IDWD40G120C5XKSA1

The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 40 A in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in this package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

No reverse recovery current, no forward recovery voltage

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

Tight forward voltage distribution

High surge current capability