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Infineon 1200 V 15 A Diode Schottky 2-Pin TO-247 IDWD15G120C5XKSA1

RS Stock No.:: 222-4840
Mfr. Part No.:: IDWD15G120C5XKSA1
Brand:: Infineon

Infineon 1200 V 15 A Diode Schottky 2-Pin TO-247 IDWD15G120C5XKSA1

Bulk discount available

Subtotal (1 pack of 2 units)*

£11.46

(exc. VAT)

£13.76

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

186 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 8	£5.73	£11.46
10 - 18	£5.27	£10.54
20 - 48	£4.93	£9.86
50 - 98	£4.58	£9.16
100 +	£4.24	£8.48

*price indicative

RS Stock No.:: 222-4840
Mfr. Part No.:: IDWD15G120C5XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	Diode
	Mount Type	Surface
	Package Type	TO-247
	Maximum Continuous Forward Current If	15A
	Peak Reverse Repetitive Voltage Vrrm	1200V
	Series	IDWD15G120C5
	Diode Configuration	Single
	Rectifier Type	Schottky
	Pin Count	2
	Peak Reverse Current Ir	8μA
	Minimum Operating Temperature	-55°C
	Maximum Forward Voltage Vf	1.7V
	Peak Non-Repetitive Forward Surge Current Ifsm	140A
	Maximum Operating Temperature	175°C
	Length	40.21mm
	Width	15.8 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type Diode
	Mount Type Surface
	Package Type TO-247
	Maximum Continuous Forward Current If 15A
	Peak Reverse Repetitive Voltage Vrrm 1200V
	Series IDWD15G120C5
	Diode Configuration Single
	Rectifier Type Schottky
	Pin Count 2
	Peak Reverse Current Ir 8μA
	Minimum Operating Temperature -55°C
	Maximum Forward Voltage Vf 1.7V
	Peak Non-Repetitive Forward Surge Current Ifsm 140A
	Maximum Operating Temperature 175°C
	Length 40.21mm
	Width 15.8 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IDWD15G120C5XKSA1

The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 15 A is also available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

No reverse recovery current, no forward recovery voltage

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

Tight forward voltage distribution

High surge current capability