Infineon 1200V 22.8A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH08G120C5XKSA1
- RS Stock No.:
- 133-9899
- Mfr. Part No.:
- IDH08G120C5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£2.37
(exc. VAT)
£2.84
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 150 unit(s) shipping from 27 October 2025
- Plus 999,999,849 unit(s) shipping from 23 March 2026
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Units | Per unit |
|---|---|
| 1 - 9 | £2.37 |
| 10 - 24 | £2.25 |
| 25 - 49 | £2.16 |
| 50 - 99 | £2.06 |
| 100 + | £1.92 |
*price indicative
- RS Stock No.:
- 133-9899
- Mfr. Part No.:
- IDH08G120C5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mounting Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current | 22.8A | |
| Peak Reverse Repetitive Voltage | 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky Diode | |
| Diode Type | SiC Schottky | |
| Pin Count | 2 + Tab | |
| Maximum Forward Voltage Drop | 2.85V | |
| Number of Elements per Chip | 1 | |
| Diode Technology | SiC Schottky | |
| Peak Non-Repetitive Forward Surge Current | 70A | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Mounting Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current 22.8A | ||
Peak Reverse Repetitive Voltage 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky Diode | ||
Diode Type SiC Schottky | ||
Pin Count 2 + Tab | ||
Maximum Forward Voltage Drop 2.85V | ||
Number of Elements per Chip 1 | ||
Diode Technology SiC Schottky | ||
Peak Non-Repetitive Forward Surge Current 70A | ||
- COO (Country of Origin):
- MY
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
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