Infineon LogicFET N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-220AB IRL520NPBF
- RS Stock No.:
- 919-4870
- Mfr. Part No.:
- IRL520NPBF
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 919-4870
- Mfr. Part No.:
- IRL520NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 10 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220AB | |
Series | LogicFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 180 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 48 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 20 nC @ 5 V | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 8.77mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series LogicFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 20 nC @ 5 V | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon LogicFET Series MOSFET, 10A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRL520NPBF
This MOSFET is designed for various high-power applications. Its N-channel configuration and enhancement mode capability make it suitable for switching and amplification tasks in automation and electrical sectors. With a maximum continuous drain current of 10 A and a maximum drain-source voltage of 100V, it provides consistent performance in demanding environments. The TO-220AB package type facilitates effective thermal management in different mounting situations.
Features & Benefits
• High power dissipation capacity of 48W for robust performance
• Low drain-source resistance of 180mΩ enhances efficiency
• Wide operating temperature range from -55°C to +175°C ensures reliability
• Suitable for through-hole mounting, facilitating easy integration
• Enhanced gate threshold voltage between 1V and 2V optimises control
• Single transistor configuration simplifies design and assembly
• Low drain-source resistance of 180mΩ enhances efficiency
• Wide operating temperature range from -55°C to +175°C ensures reliability
• Suitable for through-hole mounting, facilitating easy integration
• Enhanced gate threshold voltage between 1V and 2V optimises control
• Single transistor configuration simplifies design and assembly
Applications
• Utilised in power supply circuits for efficient voltage regulation
• Employed in motor control systems due to its high current capacity
• Applicable in industrial automation for effective switching operations
• Integrated into power management solutions for energy-efficient designs
• Employed in motor control systems due to its high current capacity
• Applicable in industrial automation for effective switching operations
• Integrated into power management solutions for energy-efficient designs
What type of cooling method is recommended for optimal performance?
Effective heatsinking is essential to maintain operational efficiency and prevent overheating, especially under high load conditions.
Can it be directly replaced with other MOSFETs?
While direct replacements might be possible, it is crucial to consider specifications such as current and voltage ratings, as well as gate drive requirements, to ensure compatibility and functionality.
What is the recommended maximum gate-source voltage?
The maximum gate-source voltage should not exceed -16V to +16V to avoid damage to the device and ensure reliable operation.
How should I handle this MOSFET during installation?
Use electrostatic discharge (ESD) precautions and ensure secure connections to prevent failures or intermittent operation once installed in a circuit.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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