Infineon LogicFET N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-220AB IRL520NPBF

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RS Stock No.:
919-4870
Mfr. Part No.:
IRL520NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

LogicFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

20 nC @ 5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

8.77mm

COO (Country of Origin):
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon LogicFET Series MOSFET, 10A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRL520NPBF


This MOSFET is designed for various high-power applications. Its N-channel configuration and enhancement mode capability make it suitable for switching and amplification tasks in automation and electrical sectors. With a maximum continuous drain current of 10 A and a maximum drain-source voltage of 100V, it provides consistent performance in demanding environments. The TO-220AB package type facilitates effective thermal management in different mounting situations.

Features & Benefits


• High power dissipation capacity of 48W for robust performance
• Low drain-source resistance of 180mΩ enhances efficiency
• Wide operating temperature range from -55°C to +175°C ensures reliability
• Suitable for through-hole mounting, facilitating easy integration
• Enhanced gate threshold voltage between 1V and 2V optimises control
• Single transistor configuration simplifies design and assembly

Applications


• Utilised in power supply circuits for efficient voltage regulation
• Employed in motor control systems due to its high current capacity
• Applicable in industrial automation for effective switching operations
• Integrated into power management solutions for energy-efficient designs

What type of cooling method is recommended for optimal performance?


Effective heatsinking is essential to maintain operational efficiency and prevent overheating, especially under high load conditions.

Can it be directly replaced with other MOSFETs?


While direct replacements might be possible, it is crucial to consider specifications such as current and voltage ratings, as well as gate drive requirements, to ensure compatibility and functionality.

What is the recommended maximum gate-source voltage?


The maximum gate-source voltage should not exceed -16V to +16V to avoid damage to the device and ensure reliable operation.

How should I handle this MOSFET during installation?


Use electrostatic discharge (ESD) precautions and ensure secure connections to prevent failures or intermittent operation once installed in a circuit.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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