N-Channel MOSFET, 8.5 A, 60 V, 8-Pin SOIC Vishay SI4850EY-T1-GE3

RS Stock No.:: 919-4191
Mfr. Part No.:: SI4850EY-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 8.5 A, 60 V, 8-Pin SOIC Vishay SI4850EY-T1-GE3

Available to back order for despatch when stock is available

Price Each (On a Reel of 2500)

£0.892

(exc. VAT)

£1.07

(inc. VAT)

Units	Per unit	Per Reel*
2500 +	£0.892	£2,230.00

*price indicative

RS Stock No.:: 919-4191
Mfr. Part No.:: SI4850EY-T1-GE3
Brand:: Vishay

Datasheet
ESD Control Selection Guide V1

RS Stock No.:: 919-4191
Mfr. Part No.:: SI4850EY-T1-GE3
Brand:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	8.5 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	47 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.3 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	4mm
Maximum Operating Temperature	+150 °C
Length	5mm
Typical Gate Charge @ Vgs	18 nC @ 10 V
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	1.5mm

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	8.5 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	47 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.3 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	4mm
Maximum Operating Temperature	+150 °C
Length	5mm
Typical Gate Charge @ Vgs	18 nC @ 10 V
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	1.5mm

N-Channel MOSFET, 8.5 A, 60 V, 8-Pin SOIC Vishay SI4850EY-T1-GE3

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