Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3
- RS Stock No.:
- 812-3205
- Mfr. Part No.:
- SI4178DY-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)*
£7.30
(exc. VAT)
£8.76
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,720 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | £0.365 | £7.30 |
| 200 - 480 | £0.291 | £5.82 |
| 500 - 980 | £0.274 | £5.48 |
| 1000 - 1980 | £0.237 | £4.74 |
| 2000 + | £0.197 | £3.94 |
*price indicative
- RS Stock No.:
- 812-3205
- Mfr. Part No.:
- SI4178DY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si4178DY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.85V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.55mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si4178DY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.85V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.55mm | ||
Width 4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
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