Vishay N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC SI4190ADY-T1-GE3

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Subtotal (1 reel of 2500 units)*

£1,325.00

(exc. VAT)

£1,600.00

(inc. VAT)

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  • 999,997,500 unit(s) shipping from 03 September 2026
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Units
Per unit
Per Reel*
2500 +£0.53£1,325.00

*price indicative

RS Stock No.:
919-4233
Mfr. Part No.:
SI4190ADY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

100 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

44.4 nC @ 10 V

Length

5mm

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

COO (Country of Origin):
TW

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

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