Infineon HEXFET N-Channel MOSFET, 106 A, 75 V, 3-Pin D2PAK IRF3808STRLPBF
- RS Stock No.:
- 915-4941
- Mfr. Part No.:
- IRF3808STRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£10.60
(exc. VAT)
£12.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 380 unit(s) shipping from 08 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.12 | £10.60 |
| 25 - 45 | £2.014 | £10.07 |
| 50 - 120 | £1.93 | £9.65 |
| 125 - 245 | £1.802 | £9.01 |
| 250 + | £1.696 | £8.48 |
*price indicative
- RS Stock No.:
- 915-4941
- Mfr. Part No.:
- IRF3808STRLPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 106 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Width | 11.3mm | |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 106 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 10.67mm | ||
Width 11.3mm | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
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