Infineon HEXFET N-Channel MOSFET, 106 A, 75 V, 3-Pin D2PAK IRF3808STRLPBF
- RS Stock No.:
- 915-4941
- Mfr. Part No.:
- IRF3808STRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£10.60
(exc. VAT)
£12.70
(inc. VAT)
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In Stock
- 380 unit(s) ready to ship
- Plus 999,999,615 unit(s) shipping from 18 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.12 | £10.60 |
| 25 - 45 | £2.014 | £10.07 |
| 50 - 120 | £1.93 | £9.65 |
| 125 - 245 | £1.802 | £9.01 |
| 250 + | £1.696 | £8.48 |
*price indicative
- RS Stock No.:
- 915-4941
- Mfr. Part No.:
- IRF3808STRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 106 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Width | 11.3mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 106 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Length 10.67mm | ||
Transistor Material Si | ||
Width 11.3mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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