Name: Infineon HEXFET N-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB AUIRFZ44N
Brand: Infineon
SKU: 912-8646
Price: 0.89 GBP
Availability: OutOfStock

Automotive N-Channel Power MOSFET, Infineon

Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	31 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	24 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	45 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	65 nC @ 10 V
	Number of Elements per Chip	1
	Length	10.66mm
	Width	4.82mm
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	16.51mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 31 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 24 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 45 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 65 nC @ 10 V
	Number of Elements per Chip 1
	Length 10.66mm
	Width 4.82mm
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 16.51mm

Infineon HEXFET N-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB AUIRFZ44N

Automotive N-Channel Power MOSFET, Infineon

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