Infineon HEXFET N-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB AUIRFZ44N
- RS Stock No.:
- 912-8646
- Mfr. Part No.:
- AUIRFZ44N
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£37.25
(exc. VAT)
£44.70
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £0.745 | £37.25 |
*price indicative
- RS Stock No.:
- 912-8646
- Mfr. Part No.:
- AUIRFZ44N
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 31 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 24 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.82mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.66mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.51mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 24 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.82mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 65 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.66mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 16.51mm | ||
- COO (Country of Origin):
- MX
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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