Infineon HEXFET N-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB AUIRFZ44N
- RS Stock No.:
- 912-8646
- Mfr. Part No.:
- AUIRFZ44N
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£37.25
(exc. VAT)
£44.70
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £0.745 | £37.25 |
*price indicative
- RS Stock No.:
- 912-8646
- Mfr. Part No.:
- AUIRFZ44N
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 31 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 24 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.82mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V | |
| Length | 10.66mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 16.51mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 24 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.82mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 65 nC @ 10 V | ||
Length 10.66mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 16.51mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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