Infineon OptiMOS™ 5 N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 IPB010N06NATMA1
- RS Stock No.:
- 906-4353
- Mfr. Part No.:
- IPB010N06NATMA1
- Brand:
- Infineon
Subtotal (1 pack of 2 units)*
£9.58
(exc. VAT)
£11.50
(inc. VAT)
FREE delivery for orders over £50.00
- 1,000 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
2 - 18 | £4.79 | £9.58 |
20 - 98 | £4.085 | £8.17 |
100 - 198 | £3.54 | £7.08 |
200 - 498 | £3.35 | £6.70 |
500 + | £3.00 | £6.00 |
*price indicative
- RS Stock No.:
- 906-4353
- Mfr. Part No.:
- IPB010N06NATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 180 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | D2PAK-7 | |
Series | OptiMOS™ 5 | |
Mounting Type | Surface Mount | |
Pin Count | 7 | |
Maximum Drain Source Resistance | 1.5 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 300 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 208 nC @ 10 V | |
Length | 10.31mm | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 4.57mm | |
Forward Diode Voltage | 4.2V | |
Height | 9.45mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK-7 | ||
Series OptiMOS™ 5 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 1.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 208 nC @ 10 V | ||
Length 10.31mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.57mm | ||
Forward Diode Voltage 4.2V | ||
Height 9.45mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Exempt
Infineon OptiMOS™5 Power MOSFETs
Summary of Features
- Optimized for synchronous rectification
- 40% lower R DS(on) than alternative devices
- 40% improvement of FOM over similar devices
- RoHS compliant - halogen free
- MSL1 rated
- Optimized for synchronous rectification
- 100%avalanchetested
- Superior thermal resistance
- N-channel, normal level
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
Benefits
- Highest system efficiency
- Less paralleling required
- Increased power density
- System cost reduction
- Very low voltage overshoot
Potential Applications
- Synchronous rectification
- Solar micro inverter
- Isolated DC-DC converters
- Motor control for 12-48V systems
- Or-ing switches
Related links
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