Vishay EF Series N-Channel MOSFET, 70 A, 600 V, 3-Pin TO-247AC SiHG70N60EF-GE3

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Subtotal (1 unit)*

£10.71

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£12.85

(inc. VAT)

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1 - 9£10.71
10 - 24£10.19
25 - 49£9.63
50 - 99£8.58
100 +£8.15

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Packaging Options:
RS Stock No.:
903-4475
Mfr. Part No.:
SiHG70N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

600 V

Series

EF Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

38 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

520 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

253 nC @ 10 V

Width

5.31mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

20.82mm

COO (Country of Origin):
CN

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor


Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)


MOSFET Transistors, Vishay Semiconductor

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