N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 Infineon IPP220N25NFDAKSA1

RS Stock No.:: 898-6983
Mfr. Part No.:: IPP220N25NFDAKSA1
Brand:: Infineon

N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 Infineon IPP220N25NFDAKSA1

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£9.64

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£11.56

(inc. VAT)

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Units	Per unit	Per Pack**
2 - 8	£4.82	£9.64
10 - 18	£4.195	£8.39
20 - 48	£3.955	£7.91
50 - 98	£3.665	£7.33
100 +	£3.37	£6.74

**price indicative

RS Stock No.:: 898-6983
Mfr. Part No.:: IPP220N25NFDAKSA1
Brand:: Infineon

Infineon OptiMOS™ FD Power MOSFET

Infineon OptiMOS FD Series MOSFET, 61A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IPP220N25NFDAKSA1

This MOSFET is designed for high-performance applications that require efficient power management. With its N-channel enhancement mode configuration and robust specifications, it plays an essential role in sectors such as automation, electronics, and electrical systems. It offers a maximum continuous drain current of 61A and a breakdown voltage of 250V, providing reliability and thermal performance in challenging environments.

Features & Benefits

• Low on-resistance increases energy efficiency during operation
• High current capability supports a range of applications
• Elevated operating temperature of up to +175°C enhances versatility
• Optimised for hard commutation, contributing to ruggedness and durability
• Compliant with RoHS and halogen-free regulations, promoting eco-friendliness
• Efficient gate charge characteristics ensure effective switching

Applications

• Used in power conversion circuits for automation equipment
• Ideal for high-power motor drives in industrial machinery
• Commonly applied in power supplies for electronic devices
• Suitable for automotive power management systems
• Employed in renewable energy systems for inverters

What is the maximum power dissipation capacity?

It can handle a maximum power dissipation of 300W, ensuring performance in high load scenarios.

How does it perform in high-temperature environments?

This MOSFET can operate continuously at temperatures reaching +175°C, suitable for extreme conditions.

Can it handle pulsed drain currents?

Yes, the device can manage pulsed drain currents up to 244A, beneficial for transient load applications.

What is the significance of its low Rds(on) value?

A low Rds(on) of 22mΩ reduces power loss and increases efficiency during operation, crucial for energy-sensitive applications.

How should it be mounted for optimal performance?

The device features a TO-220 package and is designed for through-hole mounting, which aids thermal management in circuit designs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	61 A
	Maximum Drain Source Voltage	250 V
	Package Type	TO-220
	Series	OptiMOS FD
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	22 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	300 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	65 nC @ 10 V
	Number of Elements per Chip	1
	Width	4.57mm
	Length	10.36mm
	Minimum Operating Temperature	-55 °C
	Height	15.95mm
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 61 A
	Maximum Drain Source Voltage 250 V
	Package Type TO-220
	Series OptiMOS FD
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 22 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 300 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 65 nC @ 10 V
	Number of Elements per Chip 1
	Width 4.57mm
	Length 10.36mm
	Minimum Operating Temperature -55 °C
	Height 15.95mm
	Forward Diode Voltage 1.2V

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