Infineon CoolMOS™ C6 N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-220 IPP60R099C6XKSA1
- RS Stock No.:
- 898-6895
- Mfr. Part No.:
- IPP60R099C6XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£10.10
(exc. VAT)
£12.12
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 392 unit(s) ready to ship
- Plus 504 unit(s) shipping from 11 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £5.05 | £10.10 |
| 10 - 18 | £4.495 | £8.99 |
| 20 - 48 | £4.19 | £8.38 |
| 50 - 98 | £3.94 | £7.88 |
| 100 + | £3.635 | £7.27 |
*price indicative
- RS Stock No.:
- 898-6895
- Mfr. Part No.:
- IPP60R099C6XKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 38 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220 | |
| Series | CoolMOS™ C6 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 99 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 35 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 119 nC @ 10 V | |
| Length | 10.65mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.9mm | |
| Height | 16.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 0.9V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 38 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 | ||
Series CoolMOS™ C6 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 99 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 35 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 119 nC @ 10 V | ||
Length 10.65mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 4.9mm | ||
Height 16.15mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 0.9V | ||
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