Name: Infineon OptiMOS™ 3 N-Channel MOSFET, 70 A, 80 V, 3-Pin TO-220 IPP100N08N3GXKSA1
Brand: Infineon
SKU: 892-2292
Price: 1.46 GBP
Availability: Discontinued

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	70 A
	Maximum Drain Source Voltage	80 V
	Package Type	TO-220
	Series	OptiMOS™ 3
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	18.2 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	100 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Length	10.36mm
	Typical Gate Charge @ Vgs	26 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Width	4.57mm
	Minimum Operating Temperature	-55 °C
	Height	15.95mm
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 70 A
	Maximum Drain Source Voltage 80 V
	Package Type TO-220
	Series OptiMOS™ 3
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 18.2 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 100 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Number of Elements per Chip 1
	Length 10.36mm
	Typical Gate Charge @ Vgs 26 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Width 4.57mm
	Minimum Operating Temperature -55 °C
	Height 15.95mm
	Forward Diode Voltage 1.2V

Infineon OptiMOS™ 3 N-Channel MOSFET, 70 A, 80 V, 3-Pin TO-220 IPP100N08N3GXKSA1

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

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