Infineon CoolMOS™ CE N-Channel MOSFET, 14.1 A, 550 V, 3-Pin TO-220 IPP50R380CEXKSA1

RS Stock No.:: 892-2267
Mfr. Part No.:: IPP50R380CEXKSA1
Brand:: Infineon

Infineon CoolMOS™ CE N-Channel MOSFET, 14.1 A, 550 V, 3-Pin TO-220 IPP50R380CEXKSA1

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RS Stock No.:: 892-2267
Mfr. Part No.:: IPP50R380CEXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	14.1 A
	Maximum Drain Source Voltage	550 V
	Series	CoolMOS™ CE
	Package Type	TO-220
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	380 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	98 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Length	10.36mm
	Typical Gate Charge @ Vgs	24.8 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Width	4.57mm
	Height	15.95mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	0.85V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 14.1 A
	Maximum Drain Source Voltage 550 V
	Series CoolMOS™ CE
	Package Type TO-220
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 380 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 98 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Transistor Material Si
	Number of Elements per Chip 1
	Length 10.36mm
	Typical Gate Charge @ Vgs 24.8 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Width 4.57mm
	Height 15.95mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 0.85V

Infineon CoolMOS™ CE Power MOSFET

Infineon CoolMOS™ CE Series MOSFET, 14.1A Maximum Continuous Drain Current, 98W Maximum Power Dissipation - IPP50R380CEXKSA1

This MOSFET is tailored for high-voltage power applications, focusing on efficiency and dependability. Incorporating CoolMOS™ technology, it improves switching performance while minimising losses, making it advantageous for various industrial applications and significantly enhancing energy management.

Features & Benefits

• Low Rds(on) reduces conduction losses, which contributes to efficiency
• High continuous drain current rating accommodates rigorous applications
• Simplifies integration into existing systems due to easy drivability
• Flexible gate threshold voltage broadens compatibility with different circuits
• Sturdy package design ensures durability in challenging environments

Applications

• Suitable for power factor correction (PFC) stages
• Works well in hard-switching PWM stages
• Applicable in resonant switching for LCD and PDP televisions
• Effective in lighting for efficient power management
• Utilised in power supplies for PCs and automation systems

What is the optimal gate-source voltage for operation?

The MOSFET functions effectively with a maximum gate-source voltage of ±30 V, optimising control across various applications.

How does this component perform in thermal environments?

With a maximum power dissipation of 98 W, it operates efficiently between -55°C and +150°C, making it suitable for a range of thermal conditions.

Can this component handle pulsed currents?

It can manage pulse currents up to 32.4A, supporting transient conditions competently without compromising performance.

What advantages does the superjunction technology provide?

Superjunction technology lowers both switching and conduction losses, enhancing overall efficiency and extending device lifespan in applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.