onsemi PowerTrench N-Channel MOSFET, 22 A, 60 V, 8-Pin MLPAK33 FDMC86520L
- RS Stock No.:
- 864-4967
- Mfr. Part No.:
- FDMC86520L
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£2,457.00
(exc. VAT)
£2,949.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 30 December 2025
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.819 | £2,457.00 |
*price indicative
- RS Stock No.:
- 864-4967
- Mfr. Part No.:
- FDMC86520L
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 22 A | |
Maximum Drain Source Voltage | 60 V | |
Series | PowerTrench | |
Package Type | MLPAK33 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 11 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 40 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 45 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Width | 3.3mm | |
Length | 3.3mm | |
Minimum Operating Temperature | -55 °C | |
Height | 0.725mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 22 A | ||
Maximum Drain Source Voltage 60 V | ||
Series PowerTrench | ||
Package Type MLPAK33 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 11 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 45 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 3.3mm | ||
Length 3.3mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.725mm | ||
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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