onsemi PowerTrench N-Channel MOSFET, 19 A, 150 V, 8-Pin MLP8 FDMC86240
- RS Stock No.:
- 166-2678
- Mfr. Part No.:
- FDMC86240
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£2,595.00
(exc. VAT)
£3,114.00
(inc. VAT)
FREE delivery for orders over £50.00
- 999,999,000 unit(s) shipping from 18 December 2025
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.865 | £2,595.00 |
*price indicative
- RS Stock No.:
- 166-2678
- Mfr. Part No.:
- FDMC86240
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 19 A | |
Maximum Drain Source Voltage | 150 V | |
Series | PowerTrench | |
Package Type | MLP8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 97 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 40 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
Length | 3.3mm | |
Width | 3.3mm | |
Minimum Operating Temperature | -55 °C | |
Height | 0.75mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 150 V | ||
Series PowerTrench | ||
Package Type MLP8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 97 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Length 3.3mm | ||
Width 3.3mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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