onsemi P-Channel MOSFET, 5.7 A, 200 V, 3-Pin DPAK FQD7P20TM

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Subtotal (1 reel of 2500 units)*

£927.50

(exc. VAT)

£1,112.50

(inc. VAT)

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2500 - 10000£0.371£927.50
12500 - 22500£0.359£897.50
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presentation
onsemi P-Channel MOSFET, 5.7 A, 200 V, 3-Pin DPAK FQD7P20TM
RS Stock No.
671-1034

Each (In a Pack of 5)

£1.072

(exc. VAT)

£1.286

(inc. VAT)

RS Stock No.:
864-4948
Mfr. Part No.:
FQD7P20TM
Brand:
onsemi
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Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

5.7 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

690 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Width

6.22mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

2.39mm

Minimum Operating Temperature

-55 °C

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology

Applications:


• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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