onsemi FQD7P20TM Type P-Channel MOSFET, 5.7 A, 200 V Enhancement, 3-Pin TO-252

RS Stock No.:: 864-4948
Mfr. Part No.:: FQD7P20TM
Brand:: onsemi

onsemi FQD7P20TM Type P-Channel MOSFET, 5.7 A, 200 V Enhancement, 3-Pin TO-252

Bulk discount available

Subtotal (1 reel of 2500 units)*

£927.50

(exc. VAT)

£1,112.50

(inc. VAT)

FREE delivery for orders over £50.00

Limited stock

Plus 2,500 left, shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2500 - 10000	£0.371	£927.50
12500 - 22500	£0.359	£897.50
25000 +	£0.349	£872.50

*price indicative

RS Stock No.:: 864-4948
Mfr. Part No.:: FQD7P20TM
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	5.7A
	Maximum Drain Source Voltage Vds	200V
	Series	FQD7P20TM
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	690mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-5V
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	±30 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	19nC
	Maximum Operating Temperature	150°C
	Length	6.6mm
	Height	2.3mm
	Width	6.1 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 5.7A
	Maximum Drain Source Voltage Vds 200V
	Series FQD7P20TM
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 690mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -5V
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs ±30 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 19nC
	Maximum Operating Temperature 150°C
	Length 6.6mm
	Height 2.3mm
	Width 6.1 mm
	Standards/Approvals No
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.