onsemi FQD7P20TM Type P-Channel MOSFET, 5.7 A, 200 V Enhancement, 3-Pin TO-252 FQD7P20TM
- RS Stock No.:
- 671-1034
- Mfr. Part No.:
- FQD7P20TM
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£4.29
(exc. VAT)
£5.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 25 unit(s) ready to ship
- Plus 4,010 unit(s) shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.858 | £4.29 |
| 50 - 95 | £0.74 | £3.70 |
| 100 - 495 | £0.642 | £3.21 |
| 500 - 995 | £0.564 | £2.82 |
| 1000 + | £0.512 | £2.56 |
*price indicative
- RS Stock No.:
- 671-1034
- Mfr. Part No.:
- FQD7P20TM
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | FQD7P20TM | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 690mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | -5V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Height | 2.3mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series FQD7P20TM | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 690mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf -5V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Height 2.3mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi P-Channel MOSFET 200 V, 3-Pin DPAK FQD7P20TM
- Diodes Inc P-Channel MOSFET 70 V, 3-Pin DPAK ZXMP7A17KTC
- onsemi P-Channel MOSFET 60 V, 3-Pin DPAK NTD2955T4G
- onsemi P-Channel MOSFET 60 V, 3-Pin DPAK FQD11P06TM
- onsemi P-Channel MOSFET 100 V, 3-Pin DPAK FQD8P10TM
- onsemi P-Channel MOSFET 60 V, 3-Pin DPAK NTD20P06LT4G
- onsemi P-Channel MOSFET 30 V, 3-Pin DPAK NTD25P03LT4G
- onsemi P-Channel MOSFET 60 V, 3-Pin DPAK FQD17P06TM
