Infineon HEXFET Dual N-Channel MOSFET, 3 A, 50 V, 8-Pin SOIC IRF7103TRPBF
- RS Stock No.:
- 831-2865
- Mfr. Part No.:
- IRF7103TRPBF
- Brand:
- Infineon
Subtotal (1 pack of 20 units)*
£8.06
(exc. VAT)
£9.68
(inc. VAT)
FREE delivery for orders over £50.00
- 40 unit(s) ready to ship
- Plus 7,240 unit(s) shipping from 09 October 2025
Units | Per unit | Per Pack* |
---|---|---|
20 - 80 | £0.403 | £8.06 |
100 - 180 | £0.27 | £5.40 |
200 - 480 | £0.25 | £5.00 |
500 - 980 | £0.234 | £4.68 |
1000 + | £0.218 | £4.36 |
*price indicative
- RS Stock No.:
- 831-2865
- Mfr. Part No.:
- IRF7103TRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 3 A | |
Maximum Drain Source Voltage | 50 V | |
Package Type | SOIC | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 200 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 2 | |
Length | 5mm | |
Width | 4mm | |
Height | 1.5mm | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 50 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Length 5mm | ||
Width 4mm | ||
Height 1.5mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH
N-Channel Power MOSFET 55V, Infineon
Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7103TRPBF
Features & Benefits
• Maximum continuous drain current of 3A enhances power handling
• Operational temperatures up to +150°C for increased reliability
• Wide gate threshold range of 1V to 3V for flexible control
• Dual isolated transistor configuration aids circuit integration
• Surface mount design simplifies PCB assembly and optimises space
Applications
• Integrated into motor drive for efficient motor control
• Employed in switching power supplies for improved performance
• Suitable for automation systems needing dependable switching components
What is the recommended operating temperature range for this component?
How does one determine the suitable gate voltage for optimal performance?
What safety precautions should be taken when using this device?
Can it be used in circuits requiring fast switching?
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