Infineon HEXFET Dual N-Channel MOSFET, 3 A, 50 V, 8-Pin SOIC IRF7103TRPBF

RS Stock No.:: 831-2865
Mfr. Part No.:: IRF7103TRPBF
Brand:: Infineon

Infineon HEXFET Dual N-Channel MOSFET, 3 A, 50 V, 8-Pin SOIC IRF7103TRPBF

Bulk discount available

Subtotal (1 pack of 20 units)*

£8.06

(exc. VAT)

£9.68

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

40 unit(s) ready to ship
Plus 7,240 unit(s) shipping from 30 October 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 80	£0.403	£8.06
100 - 180	£0.27	£5.40
200 - 480	£0.25	£5.00
500 - 980	£0.234	£4.68
1000 +	£0.218	£4.36

*price indicative

RS Stock No.:: 831-2865
Mfr. Part No.:: IRF7103TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	3 A
	Maximum Drain Source Voltage	50 V
	Series	HEXFET
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	200 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	12 nC @ 10 V
	Length	5mm
	Width	4mm
	Number of Elements per Chip	2
	Height	1.5mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 3 A
	Maximum Drain Source Voltage 50 V
	Series HEXFET
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 200 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 12 nC @ 10 V
	Length 5mm
	Width 4mm
	Number of Elements per Chip 2
	Height 1.5mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V

COO (Country of Origin):: PH

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7103TRPBF

This MOSFET is designed for efficient performance across various applications. Its durable construction is particularly beneficial in circuits requiring effective power management, making it suitable for electrical and automation sectors. With a maximum drain-source voltage of 50V, it ensures reliable switching capabilities to meet application demands.

Features & Benefits

• Low Rds(on) of 200mΩ for improved efficiency
• Maximum continuous drain current of 3A enhances power handling
• Operational temperatures up to +150°C for increased reliability
• Wide gate threshold range of 1V to 3V for flexible control
• Dual isolated transistor configuration aids circuit integration
• Surface mount design simplifies PCB assembly and optimises space

Applications

• Used in power supply designs for energy-efficient operation
• Integrated into motor drive for efficient motor control
• Employed in switching power supplies for improved performance
• Suitable for automation systems needing dependable switching components

What is the recommended operating temperature range for this component?

The component operates efficiently within a temperature range of -55°C to +150°C, ensuring reliability in various environments.

How does one determine the suitable gate voltage for optimal performance?

The acceptable gate-source voltage varies from -20V to +20V, providing flexibility in control circuit designs. For best results, operating near 10V is recommended, as indicated by typical gate charge specifications.

What safety precautions should be taken when using this device?

It is important to not exceed the voltage and current ratings during operation to avoid potential failure or damage. Moreover, appropriate heatsinking may be necessary to maintain optimal operating temperatures under heavy loads.

Can it be used in circuits requiring fast switching?

Yes, this MOSFET is designed for fast switching capabilities, making it well-suited for applications requiring high-speed performance, such as PWM control in motor drivers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.