Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC IRF7103TRPBF

RS Stock No.:: 831-2865
Distrelec Article No.:: 304-44-449
Mfr. Part No.:: IRF7103TRPBF
Brand:: Infineon

Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC IRF7103TRPBF

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Subtotal (1 pack of 20 units)*

£8.06

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£9.68

(inc. VAT)

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4,760 unit(s) shipping from 29 January 2026

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Units	Per unit	Per Pack*
20 - 80	£0.403	£8.06
100 - 180	£0.27	£5.40
200 - 480	£0.25	£5.00
500 - 980	£0.234	£4.68
1000 +	£0.218	£4.36

*price indicative

RS Stock No.:: 831-2865
Distrelec Article No.:: 304-44-449
Mfr. Part No.:: IRF7103TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3A
	Maximum Drain Source Voltage Vds	50V
	Package Type	SOIC
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	200mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	2W
	Typical Gate Charge Qg @ Vgs	12nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Length	5mm
	Height	1.5mm
	Standards/Approvals	No
	Width	4 mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3A
	Maximum Drain Source Voltage Vds 50V
	Package Type SOIC
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 200mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 2W
	Typical Gate Charge Qg @ Vgs 12nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Length 5mm
	Height 1.5mm
	Standards/Approvals No
	Width 4 mm
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: PH

Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7103TRPBF

This MOSFET is designed for efficient performance across various applications. Its Durable construction is particularly beneficial in circuits requiring effective power management, making it suitable for electrical and automation sectors. With a maximum drain-source voltage of 50V, it ensures reliable switching capabilities to meet application demands.

Features & Benefits

• Low Rds(on) of 200mΩ for improved efficiency

• Maximum continuous drain current of 3A enhances power handling

• Operational temperatures up to +150°C for increased reliability

• Wide gate threshold range of 1V to 3V for flexible control

• Dual isolated transistor configuration aids circuit integration

• Surface mount design simplifies PCB assembly and optimises space

Applications

• Used in power supply designs for energy-efficient operation

• Integrated into motor drive for efficient motor control

• Employed in switching power supplies for improved performance

• Suitable for automation systems needing dependable switching components

What is the recommended operating temperature range for this component?

The component operates efficiently within a temperature range of -55°C to +150°C, ensuring reliability in various environments.

How does one determine the suitable gate voltage for optimal performance?

The acceptable gate-source voltage varies from -20V to +20V, providing flexibility in control circuit designs. For best results, operating near 10V is recommended, as indicated by typical gate charge specifications.

What safety precautions should be taken when using this device?

It is important to not exceed the voltage and current ratings during operation to avoid potential failure or damage. Moreover, appropriate heatsinking may be necessary to maintain optimal operating temperatures under heavy loads.

Can it be used in circuits requiring fast switching?

Yes, this MOSFET is designed for fast switching capabilities, making it well-suited for applications requiring high-speed performance, such as PWM control in motor drivers.