Infineon HEXFET N-Channel MOSFET, 39 A, 80 V, 3-Pin DPAK IRLR2908TRPBF

RS Stock No.:: 830-3354
Mfr. Part No.:: IRLR2908TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 39 A, 80 V, 3-Pin DPAK IRLR2908TRPBF

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Subtotal (1 pack of 10 units)*

£8.56

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£10.27

(inc. VAT)

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Shipping from 19 December 2025

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Units	Per unit	Per Pack*
10 - 40	£0.856	£8.56
50 - 90	£0.676	£6.76
100 - 240	£0.633	£6.33
250 - 490	£0.591	£5.91
500 +	£0.539	£5.39

*price indicative

RS Stock No.:: 830-3354
Mfr. Part No.:: IRLR2908TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	39 A
	Maximum Drain Source Voltage	80 V
	Package Type	DPAK (TO-252)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	30 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	120 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	22 nC @ 4.5 V
	Length	6.73mm
	Number of Elements per Chip	1
	Width	6.22mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V
	Height	2.39mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 39 A
	Maximum Drain Source Voltage 80 V
	Package Type DPAK (TO-252)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 30 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 120 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 22 nC @ 4.5 V
	Length 6.73mm
	Number of Elements per Chip 1
	Width 6.22mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V
	Height 2.39mm

COO (Country of Origin):: MX

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 39A Maximum Continuous Drain Current, 120W Maximum Power Dissipation - IRLR2908TRPBF

This MOSFET is designed for versatility and efficiency across various applications that demand precise current control, particularly in space-constrained environments. Thanks to its HEXFET technology, it maintains effective performance at high temperatures, making it a suitable option for contemporary electronic and electrical systems. Its ability to manage significant power dissipation while operating in challenging conditions adds to its relevance.

Features & Benefits

• Continuous drain current capability of up to 39A for demanding load applications
• Maximum drain-source voltage of 80V for enhanced reliability
• Low on-resistance of 30mΩ for improved energy efficiency
• Operates at high temperatures up to +175°C for rigorous environments
• Surface mount design facilitates easy installation and assembly
• Enhancement mode offers improved control for varied circuitry

Applications

• Employed in power supply circuits for effective switching
• Suitable for motor control requiring accurate current regulation
• Utilised within automotive systems for efficient power management
• Ideal for high-frequency switching circuits to enhance efficiency
• Adopted in industrial automation systems for superior performance

What are the thermal characteristics of this component?

The thermal resistance junction-to-case is approximately 1.3°C/W, which supports effective heat dissipation during operation, essential for maintaining optimal performance and reliability.

How do I ensure proper installation for optimal performance?

It is important to adhere to suitable PCB design guidelines, particularly focusing on minimising inductance and maximising thermal contact with the substrate to prevent overheating during operation.

Can it handle pulsed currents effectively?

Yes, it can support pulsed drain currents up to 150A, enabling management of transient conditions without compromising the device's integrity.

What is the significance of the RDS(on) value in operations?

The low RDS(on) value of 30mΩ is important as it reduces power losses during switching, enhancing overall circuit efficiency and performance.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.