Infineon HEXFET N-Channel MOSFET, 170 A, 80 V, 3-Pin TO-247AC IRFP2907ZPBF
- RS Stock No.:
- 124-9010
- Mfr. Part No.:
- IRFP2907ZPBF
- Brand:
- Infineon
Save 28% when you buy 500 units
Subtotal (1 tube of 25 units)*
£69.90
(exc. VAT)
£83.875
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 09 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | £2.796 | £69.90 |
| 50 - 100 | £2.293 | £57.33 |
| 125 - 225 | £2.153 | £53.83 |
| 250 - 475 | £2.069 | £51.73 |
| 500 + | £1.986 | £49.65 |
*price indicative
- RS Stock No.:
- 124-9010
- Mfr. Part No.:
- IRFP2907ZPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 170 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | TO-247AC | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 310 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 5.3mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
| Length | 15.9mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.3mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 170 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 310 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 5.3mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Length 15.9mm | ||
Minimum Operating Temperature -55 °C | ||
Height 20.3mm | ||
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