Infineon HEXFET N-Channel MOSFET, 170 A, 80 V, 3-Pin TO-247AC IRFP2907ZPBF
- RS Stock No.:
- 124-9010
- Mfr. Part No.:
- IRFP2907ZPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 25 units)*
£69.90
(exc. VAT)
£83.875
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 11 May 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | £2.796 | £69.90 |
| 50 - 100 | £2.293 | £57.33 |
| 125 - 225 | £2.153 | £53.83 |
| 250 - 475 | £2.069 | £51.73 |
| 500 + | £1.986 | £49.65 |
*price indicative
- RS Stock No.:
- 124-9010
- Mfr. Part No.:
- IRFP2907ZPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 170 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | TO-247AC | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 310 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 5.3mm | |
| Length | 15.9mm | |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
| Height | 20.3mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 170 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 310 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 5.3mm | ||
Length 15.9mm | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Height 20.3mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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