Toshiba TK N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK TK7P60W,RVQ(S

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Width

6.1mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

2.3mm