Toshiba TK N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS TK100A06N1,S4X(S
- RS Stock No.:
- 827-6097
- Mfr. Part No.:
- TK100A06N1,S4X(S
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 pack of 4 units)*
£9.98
(exc. VAT)
£11.976
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 32 unit(s) ready to ship
- Plus 748 unit(s) shipping from 11 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 16 | £2.495 | £9.98 |
| 20 - 76 | £2.085 | £8.34 |
| 80 - 196 | £1.823 | £7.29 |
| 200 - 396 | £1.73 | £6.92 |
| 400 + | £1.688 | £6.75 |
*price indicative
- RS Stock No.:
- 827-6097
- Mfr. Part No.:
- TK100A06N1,S4X(S
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | TK | |
| Package Type | TO-220SIS | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 140 nC @ 10 V | |
| Length | 10mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 15mm | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 60 V | ||
Series TK | ||
Package Type TO-220SIS | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 140 nC @ 10 V | ||
Length 10mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.5mm | ||
Maximum Operating Temperature +150 °C | ||
Height 15mm | ||
- COO (Country of Origin):
- CN
MOSFET Transistors, Toshiba