Toshiba TK N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220SIS TK100A06N1,S4X(S

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

263 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220SIS

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10mm

Width

4.5mm

Transistor Material

Si

Typical Gate Charge @ Vgs

140 nC @ 10 V

Height

15mm

Forward Diode Voltage

1.2V