Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220SIS TK40A06N1,S4X(S
- RS Stock No.:
- 896-2375
- Mfr. Part No.:
- TK40A06N1,S4X(S
- Brand:
- Toshiba
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 896-2375
- Mfr. Part No.:
- TK40A06N1,S4X(S
- Brand:
- Toshiba
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 60 A | |
Maximum Drain Source Voltage | 60 V | |
Series | TK | |
Package Type | TO-220SIS | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 10.4 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Maximum Power Dissipation | 30 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Width | 4.5mm | |
Length | 10mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Height | 15mm | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 60 V | ||
Series TK | ||
Package Type TO-220SIS | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 30 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 4.5mm | ||
Length 10mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 15mm | ||