Toshiba TK N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220SIS TK17A65W,S5X(M

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Width

4.5mm

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Number of Elements per Chip

1

Height

15mm