N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK Infineon IPB120N06S402ATMA2

RS Stock No.:: 826-9235
Mfr. Part No.:: IPB120N06S402ATMA2
Brand:: Infineon

N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK Infineon IPB120N06S402ATMA2

Available to back order for despatch 16/09/2024

Price Each (In a Pack of 10)

£2.09

(exc. VAT)

£2.51

(inc. VAT)

Units	Per unit	Per Pack*
10 - 10	£2.09	£20.90
20 - 40	£1.986	£19.86
50 - 90	£1.902	£19.02
100 - 240	£1.818	£18.18
250 +	£1.735	£17.35

*price indicative

RS Stock No.:: 826-9235
Mfr. Part No.:: IPB120N06S402ATMA2
Brand:: Infineon

Technical Reference

Legislation and Compliance

RoHS Status: Exempt

Product Details

Infineon OptiMOS™ T2 Power MOSFETs

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	60 V
Package Type	D2PAK (TO-263)
Series	OptiMOS™ -T2
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	188 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	150 nC @ 10 V
Length	10mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Transistor Material	Si
Width	9.25mm
Minimum Operating Temperature	-55 °C
Height	4.4mm