Infineon OptiMOS -T2 N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S403ATMA1

Bulk discount available
View bulk pricing options

Subtotal (1 pack of 5 units)*

£28.25

(exc. VAT)

£33.90

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Pack*
5 - 5£5.65£28.25
10 - 20£5.086£25.43
25 - 45£4.746£23.73
50 - 120£4.408£22.04
125 +£4.124£20.62

*price indicative

Packaging Options:
RS Stock No.:
214-4366
Mfr. Part No.:
IPB120N08S403ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-263

Series

OptiMOS -T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

278W

Typical Gate Charge Qg @ Vgs

128nC

Maximum Operating Temperature

175°C

Height

4.5mm

Width

9.27mm

Length

10.02mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

This Infineon OptiMOS T2 MOSFET is 100% Avalanche tested and is RoHS compliant.

It is AEC Q101 qualified

Related links