Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2
- RS Stock No.:
- 218-3032
- Mfr. Part No.:
- IPB120N06S4H1ATMA2
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£1,440.00
(exc. VAT)
£1,730.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 05 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
1000 + | £1.44 | £1,440.00 |
*price indicative
- RS Stock No.:
- 218-3032
- Mfr. Part No.:
- IPB120N06S4H1ATMA2
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 120 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | D2PAK (TO-263) | |
Series | OptiMOS™ -T2 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.002 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Series OptiMOS™ -T2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.002 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
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