N-Channel MOSFET, 17 A, 250 V, 3-Pin D2PAK Infineon IPB17N25S3100ATMA1
- RS Stock No.:
- 826-9002
- Mfr. Part No.:
- IPB17N25S3100ATMA1
- Brand:
- Infineon
900 In stock - FREE next working day delivery available
Price Each (In a Pack of 20)
£1.51
(exc. VAT)
£1.81
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | £1.51 | £30.20 |
| 40 - 80 | £1.435 | £28.70 |
| 100 - 180 | £1.374 | £27.48 |
| 200 - 480 | £1.314 | £26.28 |
| 500 + | £1.223 | £24.46 |
*price indicative
- RS Stock No.:
- 826-9002
- Mfr. Part No.:
- IPB17N25S3100ATMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
RoHS Status: Exempt
Product Details
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 17 A |
| Maximum Drain Source Voltage | 250 V |
| Series | OptiMOS™-T |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 100 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 107 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 9.25mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V |
| Length | 10mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 4.4mm |
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