Infineon OptiMOS™-T N-Channel MOSFET, 50 A, 120 V, 3-Pin D2PAK IPB50N12S3L15ATMA1
- RS Stock No.:
- 214-9022
- Mfr. Part No.:
- IPB50N12S3L15ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£15.06
(exc. VAT)
£18.07
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 350 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.506 | £15.06 |
| 50 - 90 | £1.43 | £14.30 |
| 100 - 240 | £1.286 | £12.86 |
| 250 - 490 | £1.159 | £11.59 |
| 500 + | £1.101 | £11.01 |
*price indicative
- RS Stock No.:
- 214-9022
- Mfr. Part No.:
- IPB50N12S3L15ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 120 V | |
| Series | OptiMOS™-T | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.0154 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 120 V | ||
Series OptiMOS™-T | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0154 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.
The product is Automotive AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
100% Avalanche tested
It has 175°C operating temperature
Related links
- Infineon OptiMOS™-T N-Channel MOSFET 120 V, 3-Pin D2PAK IPB50N12S3L15ATMA1
- Infineon OptiMOS™-T N-Channel MOSFET 120 V, 3-Pin DPAK IPD50N12S3L15ATMA1
- Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode 120 V, 3-Pin D2PAK IPB70N12S311ATMA1
- Infineon OptiMOS™-T N-Channel MOSFET 120 V, 3-Pin DPAK IPD70N12S311ATMA1
- Infineon OptiMOS™-T N-Channel MOSFET 120 V, 3-Pin TO-220 IPP70N12S311AKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 120 V, 7-Pin D2PAK-7 IPB036N12N3GATMA1
- onsemi PowerTrench N-Channel MOSFET 40 V, 3-Pin D2PAK FDB8447L
- onsemi PowerTrench N-Channel MOSFET 250 V, 3-Pin D2PAK FDB2710


