Infineon OptiMOS™-T N-Channel MOSFET, 17 A, 250 V, 3-Pin D2PAK IPB17N25S3100ATMA1
- RS Stock No.:
- 165-5608
- Mfr. Part No.:
- IPB17N25S3100ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£781.00
(exc. VAT)
£937.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 28 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £0.781 | £781.00 |
*price indicative
- RS Stock No.:
- 165-5608
- Mfr. Part No.:
- IPB17N25S3100ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | D2PAK (TO-263) | |
| Series | OptiMOS™-T | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 107 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Width | 9.25mm | |
| Length | 10mm | |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Height | 4.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type D2PAK (TO-263) | ||
Series OptiMOS™-T | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 107 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 9.25mm | ||
Length 10mm | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Height 4.4mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS™-T N-Channel MOSFET 250 V, 3-Pin D2PAK IPB17N25S3100ATMA1
- STMicroelectronics STripFET II N-Channel MOSFET 250 V, 3-Pin DPAK STD17NF25
- Infineon OptiMOS™-T N-Channel MOSFET 250 V, 3-Pin D2PAK IPB64N25S320ATMA1
- Infineon N-Channel MOSFET 650 V, 3-Pin D2PAK IPB65R660CFDAATMA1
- Vishay N-Channel MOSFET 200 V, 3-Pin D2PAK IRL640SPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRF530NSTRLPBF
- STMicroelectronics MDmesh N-Channel MOSFET 650 V, 3-Pin D2PAK STB24NM60N
- STMicroelectronics MDmesh N-Channel MOSFET 500 V, 3-Pin D2PAK STB23NM50N