Infineon OptiMOS™-T N-Channel MOSFET, 17 A, 250 V, 3-Pin D2PAK IPB17N25S3100ATMA1

Subtotal (1 reel of 1000 units)*

£781.00

(exc. VAT)

£937.00

(inc. VAT)

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1000 +£0.781£781.00

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RS Stock No.:
165-5608
Mfr. Part No.:
IPB17N25S3100ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

250 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™-T

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Width

9.25mm

Length

10mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Height

4.4mm

Minimum Operating Temperature

-55 °C

RoHS Status: Not Applicable

COO (Country of Origin):
CN

Infineon OptiMOS™T Power MOSFETs


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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