Infineon HEXFET N-Channel MOSFET, 7.3 A, 30 V, 8-Pin SOIC IRF7201TRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

7.3 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

19 nC @ 10 V

Width

4mm

Number of Elements per Chip

1

Length

5mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.5mm