Infineon HEXFET N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342PBF

RS Stock No.:: 760-4413
Mfr. Part No.:: IRL6342PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342PBF

Discontinued

RS Stock No.:: 760-4413
Mfr. Part No.:: IRL6342PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	9.9 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOIC
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	19 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.1V
	Minimum Gate Threshold Voltage	0.5V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-12 V, +12 V
	Transistor Material	Si
	Width	4mm
	Typical Gate Charge @ Vgs	11 nC @ 4.5 V
	Number of Elements per Chip	1
	Length	5mm
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Height	1.5mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 9.9 A
	Maximum Drain Source Voltage 30 V
	Package Type SOIC
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 19 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.1V
	Minimum Gate Threshold Voltage 0.5V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -12 V, +12 V
	Transistor Material Si
	Width 4mm
	Typical Gate Charge @ Vgs 11 nC @ 4.5 V
	Number of Elements per Chip 1
	Length 5mm
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Height 1.5mm

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 9.9A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRL6342TRPBF

This N-channel MOSFET delivers solid performance for a range of electronic applications, capable of continuous drain current up to 9.9A and a drain-source voltage of 30V. It operates over a temperature range of -55°C to +150°C, making it suitable for both general and high-performance environments.

Features & Benefits

• Utilises HEXFET technology for enhanced efficiency
• Low on-resistance for reduced power losses
• Surface-mounted design for straightforward installation
• High-temperature operation improves reliability in various tasks
• Compliant with RoHS for environmentally conscious applications
• Supports enhancement mode operation for accurate control

Applications

• Suitable for power supply circuits
• Applicable in motor control systems
• Effective in battery management
• Ideal for diverse switching power

What are the maximum ratings for the device?

The device supports a maximum drain-to-source voltage of 30 V and a gate-to-source voltage of ±12V.

How does it perform in high-temperature environments?

It operates efficiently within a range of -55°C to +150°C, fitting for various applications.

Is it compatible with standard PCB layouts?

Yes, the surface mount design facilitates easy integration into standard PCB layouts.

What is the advantage of using a low-resistance MOSFET?

A low on-resistance of up to 19 mΩ minimises power loss, enhancing overall efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.