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Infineon HEXFET N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342PBF

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£2.08

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£2.495

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Per Pack*
5 - 20£0.416£2.08
25 +£0.364£1.82

*price indicative

RS Stock No.:
760-4413
Mfr. Part No.:
IRL6342PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Length

5mm

Width

4mm

Typical Gate Charge @ Vgs

11 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

1.5mm

Minimum Operating Temperature

-55 °C

Infineon HEXFET Series MOSFET, 9.9A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRL6342TRPBF


This N-channel MOSFET delivers solid performance for a range of electronic applications, capable of continuous drain current up to 9.9A and a drain-source voltage of 30V. It operates over a temperature range of -55°C to +150°C, making it suitable for both general and high-performance environments.

Features & Benefits


• Utilises HEXFET technology for enhanced efficiency
• Low on-resistance for reduced power losses
• Surface-mounted design for straightforward installation
• High-temperature operation improves reliability in various tasks
• Compliant with RoHS for environmentally conscious applications
• Supports enhancement mode operation for accurate control

Applications


• Suitable for power supply circuits
• Applicable in motor control systems
• Effective in battery management
• Ideal for diverse switching power

What are the maximum ratings for the device?


The device supports a maximum drain-to-source voltage of 30 V and a gate-to-source voltage of ±12V.

How does it perform in high-temperature environments?


It operates efficiently within a range of -55°C to +150°C, fitting for various applications.

Is it compatible with standard PCB layouts?


Yes, the surface mount design facilitates easy integration into standard PCB layouts.

What is the advantage of using a low-resistance MOSFET?


A low on-resistance of up to 19 mΩ minimises power loss, enhancing overall efficiency.

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