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Infineon HEXFET N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342PBF

RS Stock No.:: 760-4413
Mfr. Part No.:: IRL6342PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342PBF

Stock information currently inaccessible

RS Stock No.:: 760-4413
Mfr. Part No.:: IRL6342PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	9.9 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	19 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.1V
	Minimum Gate Threshold Voltage	0.5V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-12 V, +12 V
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Width	4mm
	Length	5mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	11 nC @ 4.5 V
	Height	1.5mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 9.9 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 19 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.1V
	Minimum Gate Threshold Voltage 0.5V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -12 V, +12 V
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Width 4mm
	Length 5mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 11 nC @ 4.5 V
	Height 1.5mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET Series MOSFET, 9.9A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRL6342TRPBF

This N-channel MOSFET delivers solid performance for a range of electronic applications, capable of continuous drain current up to 9.9A and a drain-source voltage of 30V. It operates over a temperature range of -55°C to +150°C, making it suitable for both general and high-performance environments.

Features & Benefits

• Utilises HEXFET technology for enhanced efficiency
• Low on-resistance for reduced power losses
• Surface-mounted design for straightforward installation
• High-temperature operation improves reliability in various tasks
• Compliant with RoHS for environmentally conscious applications
• Supports enhancement mode operation for accurate control

Applications

• Suitable for power supply circuits
• Applicable in motor control systems
• Effective in battery management
• Ideal for diverse switching power

What are the maximum ratings for the device?

The device supports a maximum drain-to-source voltage of 30 V and a gate-to-source voltage of ±12V.

How does it perform in high-temperature environments?

It operates efficiently within a range of -55°C to +150°C, fitting for various applications.

Is it compatible with standard PCB layouts?

Yes, the surface mount design facilitates easy integration into standard PCB layouts.

What is the advantage of using a low-resistance MOSFET?

A low on-resistance of up to 19 mΩ minimises power loss, enhancing overall efficiency.

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