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Infineon OptiMOS™ 3 N-Channel MOSFET, 42 A, 100 V, 8-Pin TDSON BSC160N10NS3GATMA1

RS Stock No.:: 825-9250
Mfr. Part No.:: BSC160N10NS3GATMA1
Brand:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 42 A, 100 V, 8-Pin TDSON BSC160N10NS3GATMA1

Subtotal (1 pack of 10 units)*

£6.62

(exc. VAT)

£7.94

(inc. VAT)

Stock information currently inaccessible

Units	Per unit	Per Pack*
10 +	£0.662	£6.62

*price indicative

RS Stock No.:: 825-9250
Mfr. Part No.:: BSC160N10NS3GATMA1
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	42 A
	Maximum Drain Source Voltage	100 V
	Package Type	TDSON
	Series	OptiMOS™ 3
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	33 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	60 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Width	6.35mm
	Length	5.35mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	19 nC @ 10 V
	Forward Diode Voltage	1.2V
	Height	1.1mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 42 A
	Maximum Drain Source Voltage 100 V
	Package Type TDSON
	Series OptiMOS™ 3
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 33 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 60 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Width 6.35mm
	Length 5.35mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 19 nC @ 10 V
	Forward Diode Voltage 1.2V
	Height 1.1mm
	Minimum Operating Temperature -55 °C

Infineon OptiMOS™ 3 Series MOSFET, 42A Maximum Continuous Drain Current, 60W Maximum Power Dissipation - BSC160N10NS3GATMA1

This MOSFET is engineered for efficiency and durability across a variety of applications. It serves as a fundamental component in power management systems, excelling in switching applications, making it suitable for automation and electrical sectors. Its impressive features, including high continuous drain current and low on-state resistance, optimise performance in various environments, ensuring strength and efficiency.

Features & Benefits

• Supports a continuous drain current of 42A for high-power tasks
• Operates at a maximum drain-source voltage of 100V for broad application use
• Exhibits low on-state resistance of 33mΩ, enhancing energy efficiency
• Designed with a surface mount configuration for simple circuit integration
• Functions in high temperature environments, up to +150°C
• Utilises a single N-channel configuration for improved stability

Applications

• Employed in power supplies and converters for effective energy management
• Suitable for that require compact and efficient power devices
• Utilised in motor control systems for enhanced response times
• Ideal for telecommunications systems needing robust power capabilities
• Commonly applied in renewable energy systems for efficient power conversion

What are the thermal limits for operating this device?

The device operates within a temperature range of -55°C to +150°C, suitable for various environmental conditions.

How can the low on-state resistance benefit my circuit design?

The low on-state resistance reduces power loss during operation, improving the efficiency of your circuit and decreasing heat generation.

Is there a specific mounting method required for this MOSFET?

This MOSFET features a surface mount design, facilitating straightforward integration into printed circuit boards.

Can this MOSFET be used for pulsed applications?

Yes, it can accommodate pulsed currents of up to 168A, making it apt for applications involving transient loads.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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