N-Channel MOSFET, 42 A, 100 V, 8-Pin TDSON Infineon BSC160N10NS3GATMA1
- RS Stock No.:
- 165-6893
- Mfr. Part No.:
- BSC160N10NS3GATMA1
- Brand:
- Infineon
70000 In stock - FREE next working day delivery available
Price Each (On a Reel of 5000)
£0.471
(exc. VAT)
£0.565
(inc. VAT)
| Units | Per unit | Per Reel* |
| 5000 + | £0.471 | £2,355.00 |
| *price indicative | ||
- RS Stock No.:
- 165-6893
- Mfr. Part No.:
- BSC160N10NS3GATMA1
- Brand:
- Infineon
- COO (Country of Origin):
- CN
OptiMOS 3 Power-Transistor
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).
Summary of Features
- Excellent switching performance
- World’s lowest R DS(on)
- Very low Q g and Q gd
- Excellent gate charge x R DS(on) product (FOM)
- RoHS compliant-halogen free
- MSL1 rated 2
Benefits
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
Potential Applications
- Synchronous rectification for AC-DC SMPS
- Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
- Isolated DC-DC converters (telecom and datacom systems
- Or-ing switches and circuit breakers in 48V systems
- Class D audio amplifiers
- Uninterruptable power supplies (UPS)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 42 A |
| Maximum Drain Source Voltage | 100 V |
| Series | OptiMOS 3 |
| Package Type | TDSON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 33 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 60 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 6.35mm |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Length | 5.35mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 1.1mm |
- RS Stock No.:
- 165-6893
- Mfr. Part No.:
- BSC160N10NS3GATMA1
- Brand:
- Infineon
- COO (Country of Origin):
- CN
OptiMOS 3 Power-Transistor
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).
Summary of Features
- Excellent switching performance
- World’s lowest R DS(on)
- Very low Q g and Q gd
- Excellent gate charge x R DS(on) product (FOM)
- RoHS compliant-halogen free
- MSL1 rated 2
Benefits
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
Potential Applications
- Synchronous rectification for AC-DC SMPS
- Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
- Isolated DC-DC converters (telecom and datacom systems
- Or-ing switches and circuit breakers in 48V systems
- Class D audio amplifiers
- Uninterruptable power supplies (UPS)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 42 A |
| Maximum Drain Source Voltage | 100 V |
| Series | OptiMOS 3 |
| Package Type | TDSON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 33 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 60 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 6.35mm |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Length | 5.35mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 1.1mm |