Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK IPD034N06N3GATMA1
- RS Stock No.:
- 825-9168
- Mfr. Part No.:
- IPD034N06N3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£11.80
(exc. VAT)
£14.20
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,860 unit(s) shipping from 11 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.18 | £11.80 |
| 50 - 90 | £1.121 | £11.21 |
| 100 - 240 | £1.074 | £10.74 |
| 250 - 490 | £1.003 | £10.03 |
| 500 + | £0.944 | £9.44 |
*price indicative
- RS Stock No.:
- 825-9168
- Mfr. Part No.:
- IPD034N06N3GATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | OptiMOS™ 3 | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 167 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 98 nC @ 10 V | |
| Width | 6.223mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Height | 2.413mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS™ 3 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 167 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 98 nC @ 10 V | ||
Width 6.223mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Height 2.413mm | ||
Minimum Operating Temperature -55 °C | ||
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