Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK IPD034N06N3GATMA1

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£12.35

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£14.82

(inc. VAT)

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10 - 40£1.235£12.35
50 - 90£1.173£11.73
100 - 240£1.124£11.24
250 - 490£1.05£10.50
500 +£0.988£9.88

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Packaging Options:
RS Stock No.:
825-9168
Mfr. Part No.:
IPD034N06N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 3

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.73mm

Typical Gate Charge @ Vgs

98 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

6.223mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.413mm

RoHS Status: Not Applicable

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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