Infineon OptiMOS™ 3 N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1

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£9.90

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£11.88

(inc. VAT)

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Packaging Options:
RS Stock No.:
825-9146
Mfr. Part No.:
BSC22DN20NS3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

200 V

Package Type

TDSON

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

225 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.35mm

Length

5.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

4.2 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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