Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET, 4.7 A, 60 V Enhancement, 8-Pin SOIC SI9407BDY-T1-GE3

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Subtotal (1 pack of 20 units)*

£15.36

(exc. VAT)

£18.44

(inc. VAT)

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Being discontinued
  • Final 1,340 unit(s), ready to ship
Units
Per unit
Per Pack*
20 - 80£0.768£15.36
100 - 180£0.584£11.68
200 - 480£0.538£10.76
500 - 980£0.423£8.46
1000 +£0.40£8.00

*price indicative

Packaging Options:
RS Stock No.:
818-1444
Mfr. Part No.:
SI9407BDY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

TrenchFET Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

60V

Series

Si9407BDY

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.12Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

5W

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

-0.8V

Typical Gate Charge Qg @ Vgs

8nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Height

1.55mm

Width

4 mm

Length

5mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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