Vishay N-Channel MOSFET, 3.6 A, 600 V, 3-Pin D2PAK SIHFBC30AS-GE3

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Subtotal (1 pack of 10 units)*

£13.25

(exc. VAT)

£15.90

(inc. VAT)

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  • Shipping from 16 February 2026
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Units
Per unit
Per Pack*
10 - 90£1.325£13.25
100 - 240£1.245£12.45
250 - 490£1.126£11.26
500 - 990£1.06£10.60
1000 +£0.994£9.94

*price indicative

Packaging Options:
RS Stock No.:
815-2698
Mfr. Part No.:
SIHFBC30AS-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.67mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Width

9.65mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.83mm

COO (Country of Origin):
CN

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor



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