Vishay N-Channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB IRFBC30APBF
- RS Stock No.:
- 145-1619
- Mfr. Part No.:
- IRFBC30APBF
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
£41.15
(exc. VAT)
£49.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 19 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.823 | £41.15 |
| 100 - 200 | £0.70 | £35.00 |
| 250 + | £0.659 | £32.95 |
*price indicative
- RS Stock No.:
- 145-1619
- Mfr. Part No.:
- IRFBC30APBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.6 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.2 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 74 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
| Length | 10.41mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.01mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.6 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.2 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 74 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Length 10.41mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 9.01mm | ||
- COO (Country of Origin):
- CN
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